Epitaxial (tuputupu ae)Fefiloi Gas

I totonu o pisinisi semiconductor, o le kesi na faʻaaogaina e tupu ai se tasi poʻo le sili atu foʻi o mea e ala i le tuʻuina atu o ausa vailaʻau i luga o se mea ua filifilia ma le faaeteete ua taʻua o le epitaxial gas.

O kasa epitaxial silicon e masani ona fa'aaogaina e aofia ai le dichlorosilane, silicon tetrachloride masilane. E masani ona faʻaaogaina mo le faʻapipiʻiina o le silicon epitaxial, faʻapipiʻiina o ata tifaga silicon oxide, faʻapipiʻi ata tifaga silicon nitride, faʻapipiʻi ata tifaga amorphous mo sela sola ma isi photoreceptors, ma isi. Epitaxy o se faʻagasologa lea e teuina ai se mea tioata se tasi ma tupu i luga o se substrate.

Fa'a'ofu'ofu Ausa Fa'ama'i (CVD) Kasa Fa'afefiloi

O le CVD o se auala e teuina ai nisi elemene ma fa'afefiloi e ala i fa'agaioiga kemikolo vaega kesi e fa'aaoga ai mea fa'afefiloi, o lona uiga, o se auala e fai ai ata e fa'aaoga ai fa'agaioiga vaila'au. E fa'atatau i le ituaiga ata na fa'atupuina, e ese fo'i le fa'aogaina o le kasa chemical vapor deposition (CVD).

DopingKasa Fa'afefiloi

I le gaosiga o masini semiconductor ma fesoʻotaʻiga tuʻufaʻatasia, o loʻo faʻapipiʻiina nisi o mea leaga i mea semiconductor e tuʻuina atu ai mea e manaʻomia le ituaiga conductivity ma se resistivity faapitoa e gaosia ai resistors, junctions PN, tanumia layers, ma isi.

E masani ona aofia ai arsenic, phosphine, phosphorus trifluoride, phosphorus pentafluoride, arsenic trifluoride, arsenic pentafluoride,boron trifluoride, diborane, ma isi.

E masani lava, o le puna o le doping e faʻafefiloi ma se kesi feaveaʻi (e pei o le argon ma le nitrogen) i totonu o se kapoti puna. A maeʻa faʻafefiloi, e faʻaauau pea ona tui le tafe o le kesi i totonu o le ogaumu faʻasalalau ma siʻosiʻomia le wafer, faʻapipiʻi dopants i luga o le faʻamaʻi, ona tali atu lea i le silikoni e gaosia ai metals doped e malaga atu i le silicon.

TusiaFaafefiloi Kasa

O le togitogiina o le fa'amama ese lea o le gaioiga (e pei o le u'amea, ata oxide silicon, ma isi) i luga o le substrate e aunoa ma le masking photoresist, a'o fa'asaoina le vaega ma le masking photoresist, ina ia maua ai le mamanu o ata mana'omia i luga o le substrate surface.

O auala e togi ai e aofia ai vaila'au fa'asusu susu ma fa'amago vaila'au fa'amago. O le kesi e fa'aaogaina i vaila'au fa'amago e ta'ua o le kasa etching.

O le kasa etching e masani lava o le kasa fluoride (halide), pei olecarbon tetrafluoride, nitrogen trifluoride, trifluoromethane, hexafluoroethane, perfluoropropane, ma isi.